sunxi: Add selective DRAM type and timing

DRAM chip varies, and one code cannot satisfy all DRAMs.

Add options to select a timing set.

Currently only DDR3-1333 (the original set) is added into it.

Signed-off-by: Icenowy Zheng <icenowy@aosc.xyz>
Reviewed-by: Jagan Teki <jagan@amarulasolutions.com>
Tested-by: Jagan Teki <jagan@amarulasolutions.com>
master
Icenowy Zheng 7 years ago committed by Jagan Teki
parent 66b12526f0
commit f6457ce578
  1. 30
      arch/arm/include/asm/arch-sunxi/dram_sunxi_dw.h
  2. 18
      arch/arm/mach-sunxi/Kconfig
  3. 1
      arch/arm/mach-sunxi/Makefile
  4. 119
      arch/arm/mach-sunxi/dram_sunxi_dw.c
  5. 1
      arch/arm/mach-sunxi/dram_timings/Makefile
  6. 87
      arch/arm/mach-sunxi/dram_timings/ddr3_1333.c

@ -205,4 +205,34 @@ struct sunxi_mctl_ctl_reg {
#define DXBDLR_WRITE_DELAY(x) ((x) << 8)
#define DXBDLR_READ_DELAY(x) ((x) << 0)
/*
* The delay parameters below allow to allegedly specify delay times of some
* unknown unit for each individual bit trace in each of the four data bytes
* the 32-bit wide access consists of. Also three control signals can be
* adjusted individually.
*/
#define BITS_PER_BYTE 8
#define NR_OF_BYTE_LANES (32 / BITS_PER_BYTE)
/* The eight data lines (DQn) plus DM, DQS and DQSN */
#define LINES_PER_BYTE_LANE (BITS_PER_BYTE + 3)
struct dram_para {
u16 page_size;
u8 bus_full_width;
u8 dual_rank;
u8 row_bits;
u8 bank_bits;
const u8 dx_read_delays[NR_OF_BYTE_LANES][LINES_PER_BYTE_LANE];
const u8 dx_write_delays[NR_OF_BYTE_LANES][LINES_PER_BYTE_LANE];
const u8 ac_delays[31];
};
static inline int ns_to_t(int nanoseconds)
{
const unsigned int ctrl_freq = CONFIG_DRAM_CLK / 2;
return DIV_ROUND_UP(ctrl_freq * nanoseconds, 1000);
}
void mctl_set_timing_params(uint16_t socid, struct dram_para *para);
#endif /* _SUNXI_DRAM_SUN8I_H3_H */

@ -216,6 +216,24 @@ config ARM_BOOT_HOOK_RMR
This allows both the SPL and the U-Boot proper to be entered in
either mode and switch to AArch64 if needed.
if SUNXI_DRAM_DW
config SUNXI_DRAM_DDR3
bool
choice
prompt "DRAM Type and Timing"
default SUNXI_DRAM_DDR3_1333
config SUNXI_DRAM_DDR3_1333
bool "DDR3 1333"
select SUNXI_DRAM_DDR3
---help---
This option is the original only supported memory type, which suits
many H3/H5/A64 boards available now.
endchoice
endif
config DRAM_TYPE
int "sunxi dram type"
depends on MACH_SUN8I_A83T

@ -49,5 +49,6 @@ obj-$(CONFIG_MACH_SUN8I_A23) += dram_sun8i_a23.o
obj-$(CONFIG_MACH_SUN8I_A33) += dram_sun8i_a33.o
obj-$(CONFIG_MACH_SUN8I_A83T) += dram_sun8i_a83t.o
obj-$(CONFIG_SUNXI_DRAM_DW) += dram_sunxi_dw.o
obj-$(CONFIG_SUNXI_DRAM_DW) += dram_timings/
obj-$(CONFIG_MACH_SUN9I) += dram_sun9i.o
endif

@ -16,34 +16,6 @@
#include <asm/arch/cpu.h>
#include <linux/kconfig.h>
/*
* The delay parameters below allow to allegedly specify delay times of some
* unknown unit for each individual bit trace in each of the four data bytes
* the 32-bit wide access consists of. Also three control signals can be
* adjusted individually.
*/
#define BITS_PER_BYTE 8
#define NR_OF_BYTE_LANES (32 / BITS_PER_BYTE)
/* The eight data lines (DQn) plus DM, DQS and DQSN */
#define LINES_PER_BYTE_LANE (BITS_PER_BYTE + 3)
struct dram_para {
u16 page_size;
u8 bus_full_width;
u8 dual_rank;
u8 row_bits;
u8 bank_bits;
const u8 dx_read_delays[NR_OF_BYTE_LANES][LINES_PER_BYTE_LANE];
const u8 dx_write_delays[NR_OF_BYTE_LANES][LINES_PER_BYTE_LANE];
const u8 ac_delays[31];
};
static inline int ns_to_t(int nanoseconds)
{
const unsigned int ctrl_freq = CONFIG_DRAM_CLK / 2;
return DIV_ROUND_UP(ctrl_freq * nanoseconds, 1000);
}
static void mctl_phy_init(u32 val)
{
struct sunxi_mctl_ctl_reg * const mctl_ctl =
@ -269,90 +241,6 @@ static void mctl_set_master_priority(uint16_t socid)
}
}
static void mctl_set_timing_params(uint16_t socid, struct dram_para *para)
{
struct sunxi_mctl_ctl_reg * const mctl_ctl =
(struct sunxi_mctl_ctl_reg *)SUNXI_DRAM_CTL0_BASE;
u8 tccd = 2;
u8 tfaw = ns_to_t(50);
u8 trrd = max(ns_to_t(10), 4);
u8 trcd = ns_to_t(15);
u8 trc = ns_to_t(53);
u8 txp = max(ns_to_t(8), 3);
u8 twtr = max(ns_to_t(8), 4);
u8 trtp = max(ns_to_t(8), 4);
u8 twr = max(ns_to_t(15), 3);
u8 trp = ns_to_t(15);
u8 tras = ns_to_t(38);
u16 trefi = ns_to_t(7800) / 32;
u16 trfc = ns_to_t(350);
u8 tmrw = 0;
u8 tmrd = 4;
u8 tmod = 12;
u8 tcke = 3;
u8 tcksrx = 5;
u8 tcksre = 5;
u8 tckesr = 4;
u8 trasmax = 24;
u8 tcl = 6; /* CL 12 */
u8 tcwl = 4; /* CWL 8 */
u8 t_rdata_en = 4;
u8 wr_latency = 2;
u32 tdinit0 = (500 * CONFIG_DRAM_CLK) + 1; /* 500us */
u32 tdinit1 = (360 * CONFIG_DRAM_CLK) / 1000 + 1; /* 360ns */
u32 tdinit2 = (200 * CONFIG_DRAM_CLK) + 1; /* 200us */
u32 tdinit3 = (1 * CONFIG_DRAM_CLK) + 1; /* 1us */
u8 twtp = tcwl + 2 + twr; /* WL + BL / 2 + tWR */
u8 twr2rd = tcwl + 2 + twtr; /* WL + BL / 2 + tWTR */
u8 trd2wr = tcl + 2 + 1 - tcwl; /* RL + BL / 2 + 2 - WL */
/* set mode register */
writel(0x1c70, &mctl_ctl->mr[0]); /* CL=11, WR=12 */
writel(0x40, &mctl_ctl->mr[1]);
writel(0x18, &mctl_ctl->mr[2]); /* CWL=8 */
writel(0x0, &mctl_ctl->mr[3]);
if (socid == SOCID_R40)
writel(0x3, &mctl_ctl->lp3mr11); /* odt_en[7:4] */
/* set DRAM timing */
writel(DRAMTMG0_TWTP(twtp) | DRAMTMG0_TFAW(tfaw) |
DRAMTMG0_TRAS_MAX(trasmax) | DRAMTMG0_TRAS(tras),
&mctl_ctl->dramtmg[0]);
writel(DRAMTMG1_TXP(txp) | DRAMTMG1_TRTP(trtp) | DRAMTMG1_TRC(trc),
&mctl_ctl->dramtmg[1]);
writel(DRAMTMG2_TCWL(tcwl) | DRAMTMG2_TCL(tcl) |
DRAMTMG2_TRD2WR(trd2wr) | DRAMTMG2_TWR2RD(twr2rd),
&mctl_ctl->dramtmg[2]);
writel(DRAMTMG3_TMRW(tmrw) | DRAMTMG3_TMRD(tmrd) | DRAMTMG3_TMOD(tmod),
&mctl_ctl->dramtmg[3]);
writel(DRAMTMG4_TRCD(trcd) | DRAMTMG4_TCCD(tccd) | DRAMTMG4_TRRD(trrd) |
DRAMTMG4_TRP(trp), &mctl_ctl->dramtmg[4]);
writel(DRAMTMG5_TCKSRX(tcksrx) | DRAMTMG5_TCKSRE(tcksre) |
DRAMTMG5_TCKESR(tckesr) | DRAMTMG5_TCKE(tcke),
&mctl_ctl->dramtmg[5]);
/* set two rank timing */
clrsetbits_le32(&mctl_ctl->dramtmg[8], (0xff << 8) | (0xff << 0),
((socid == SOCID_H5 ? 0x33 : 0x66) << 8) | (0x10 << 0));
/* set PHY interface timing, write latency and read latency configure */
writel((0x2 << 24) | (t_rdata_en << 16) | (0x1 << 8) |
(wr_latency << 0), &mctl_ctl->pitmg[0]);
/* set PHY timing, PTR0-2 use default */
writel(PTR3_TDINIT0(tdinit0) | PTR3_TDINIT1(tdinit1), &mctl_ctl->ptr[3]);
writel(PTR4_TDINIT2(tdinit2) | PTR4_TDINIT3(tdinit3), &mctl_ctl->ptr[4]);
/* set refresh timing */
writel(RFSHTMG_TREFI(trefi) | RFSHTMG_TRFC(trfc), &mctl_ctl->rfshtmg);
}
static u32 bin_to_mgray(int val)
{
static const u8 lookup_table[32] = {
@ -449,7 +337,12 @@ static void mctl_set_cr(uint16_t socid, struct dram_para *para)
struct sunxi_mctl_com_reg * const mctl_com =
(struct sunxi_mctl_com_reg *)SUNXI_DRAM_COM_BASE;
writel(MCTL_CR_BL8 | MCTL_CR_2T | MCTL_CR_DDR3 | MCTL_CR_INTERLEAVED |
writel(MCTL_CR_BL8 | MCTL_CR_INTERLEAVED |
#if defined CONFIG_SUNXI_DRAM_DDR3
MCTL_CR_DDR3 | MCTL_CR_2T |
#else
#error Unsupported DRAM type!
#endif
(para->bank_bits == 3 ? MCTL_CR_EIGHT_BANKS : MCTL_CR_FOUR_BANKS) |
MCTL_CR_BUS_FULL_WIDTH(para->bus_full_width) |
(para->dual_rank ? MCTL_CR_DUAL_RANK : MCTL_CR_SINGLE_RANK) |

@ -0,0 +1 @@
obj-$(CONFIG_SUNXI_DRAM_DDR3_1333) += ddr3_1333.o

@ -0,0 +1,87 @@
#include <common.h>
#include <asm/arch/dram.h>
#include <asm/arch/cpu.h>
void mctl_set_timing_params(uint16_t socid, struct dram_para *para)
{
struct sunxi_mctl_ctl_reg * const mctl_ctl =
(struct sunxi_mctl_ctl_reg *)SUNXI_DRAM_CTL0_BASE;
u8 tccd = 2;
u8 tfaw = ns_to_t(50);
u8 trrd = max(ns_to_t(10), 4);
u8 trcd = ns_to_t(15);
u8 trc = ns_to_t(53);
u8 txp = max(ns_to_t(8), 3);
u8 twtr = max(ns_to_t(8), 4);
u8 trtp = max(ns_to_t(8), 4);
u8 twr = max(ns_to_t(15), 3);
u8 trp = ns_to_t(15);
u8 tras = ns_to_t(38);
u16 trefi = ns_to_t(7800) / 32;
u16 trfc = ns_to_t(350);
u8 tmrw = 0;
u8 tmrd = 4;
u8 tmod = 12;
u8 tcke = 3;
u8 tcksrx = 5;
u8 tcksre = 5;
u8 tckesr = 4;
u8 trasmax = 24;
u8 tcl = 6; /* CL 12 */
u8 tcwl = 4; /* CWL 8 */
u8 t_rdata_en = 4;
u8 wr_latency = 2;
u32 tdinit0 = (500 * CONFIG_DRAM_CLK) + 1; /* 500us */
u32 tdinit1 = (360 * CONFIG_DRAM_CLK) / 1000 + 1; /* 360ns */
u32 tdinit2 = (200 * CONFIG_DRAM_CLK) + 1; /* 200us */
u32 tdinit3 = (1 * CONFIG_DRAM_CLK) + 1; /* 1us */
u8 twtp = tcwl + 2 + twr; /* WL + BL / 2 + tWR */
u8 twr2rd = tcwl + 2 + twtr; /* WL + BL / 2 + tWTR */
u8 trd2wr = tcl + 2 + 1 - tcwl; /* RL + BL / 2 + 2 - WL */
/* set mode register */
writel(0x1c70, &mctl_ctl->mr[0]); /* CL=11, WR=12 */
writel(0x40, &mctl_ctl->mr[1]);
writel(0x18, &mctl_ctl->mr[2]); /* CWL=8 */
writel(0x0, &mctl_ctl->mr[3]);
if (socid == SOCID_R40)
writel(0x3, &mctl_ctl->lp3mr11); /* odt_en[7:4] */
/* set DRAM timing */
writel(DRAMTMG0_TWTP(twtp) | DRAMTMG0_TFAW(tfaw) |
DRAMTMG0_TRAS_MAX(trasmax) | DRAMTMG0_TRAS(tras),
&mctl_ctl->dramtmg[0]);
writel(DRAMTMG1_TXP(txp) | DRAMTMG1_TRTP(trtp) | DRAMTMG1_TRC(trc),
&mctl_ctl->dramtmg[1]);
writel(DRAMTMG2_TCWL(tcwl) | DRAMTMG2_TCL(tcl) |
DRAMTMG2_TRD2WR(trd2wr) | DRAMTMG2_TWR2RD(twr2rd),
&mctl_ctl->dramtmg[2]);
writel(DRAMTMG3_TMRW(tmrw) | DRAMTMG3_TMRD(tmrd) | DRAMTMG3_TMOD(tmod),
&mctl_ctl->dramtmg[3]);
writel(DRAMTMG4_TRCD(trcd) | DRAMTMG4_TCCD(tccd) | DRAMTMG4_TRRD(trrd) |
DRAMTMG4_TRP(trp), &mctl_ctl->dramtmg[4]);
writel(DRAMTMG5_TCKSRX(tcksrx) | DRAMTMG5_TCKSRE(tcksre) |
DRAMTMG5_TCKESR(tckesr) | DRAMTMG5_TCKE(tcke),
&mctl_ctl->dramtmg[5]);
/* set two rank timing */
clrsetbits_le32(&mctl_ctl->dramtmg[8], (0xff << 8) | (0xff << 0),
((socid == SOCID_H5 ? 0x33 : 0x66) << 8) | (0x10 << 0));
/* set PHY interface timing, write latency and read latency configure */
writel((0x2 << 24) | (t_rdata_en << 16) | (0x1 << 8) |
(wr_latency << 0), &mctl_ctl->pitmg[0]);
/* set PHY timing, PTR0-2 use default */
writel(PTR3_TDINIT0(tdinit0) | PTR3_TDINIT1(tdinit1), &mctl_ctl->ptr[3]);
writel(PTR4_TDINIT2(tdinit2) | PTR4_TDINIT3(tdinit3), &mctl_ctl->ptr[4]);
/* set refresh timing */
writel(RFSHTMG_TREFI(trefi) | RFSHTMG_TRFC(trfc), &mctl_ctl->rfshtmg);
}
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