Sometimes Read DQ and DQS are not in phase. Since, this
phase shift differs from board to board, we need to
calibrate it at DRAM init phase, that's read DQ calibration.
This patch adds SW Read DQ calibration routine to compensate
this skew.
Signed-off-by: Alim Akhtar <alim.akhtar@samsung.com>
Signed-off-by: Akshay Saraswat <akshay.s@samsung.com>
Acked-by: Simon Glass <sjg@chromium.org>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>
when CLKM is running. If we stop CLKM when sampling it the glitches
all go away, so we'll do that as per Samsung suggestion.
We also check the "is it locked" bits of PHY_CON13 and loop until they
show the the value sampled actually represents a locked value. It
doesn't appear that the glitching and "is it locked" are related, but
it seems wise to wait until the PHY tells us the value is good before
we use it. In practice we will not loop more than a couple times (and
usually won't loop at all).
Signed-off-by: Doug Anderson <dianders@chromium.org>
Signed-off-by: Akshay Saraswat <akshay.s@samsung.com>
Acked-by: Simon Glass <sjg@chromium.org>
Tested-by: Simon Glass <sjg@chromium.org>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>
This patch intends to remove all code which enables hardware read
leveling. All characterization environments may not cope up with
h/w read leveling enabled, so we must disable this.
Also, disabling h/w read leveling improves the MIF LVcc value
(LVcc value is the value at which DDR will fail to work properly).
Improving LVcc means we have enough voltage margin for MIF.
When h/w leveling is enabled, we have almost zero volatge margin.
Signed-off-by: Alim Akhtar <alim.akhtar@samsung.com>
Signed-off-by: Akshay Saraswat <akshay.s@samsung.com>
Acked-by: Simon Glass <sjg@chromium.org>
Tested-by: Simon Glass <sjg@chromium.org>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>
Passing fewer arguments is better and mem_iv_size is never
used. Let's keep only one argument and make it cleaner.
Signed-off-by: Hatim Ali <hatim.rv@samsung.com>
Signed-off-by: Akshay Saraswat <akshay.s@samsung.com>
Acked-by: Simon Glass <sjg@chromium.org>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>
This patch intends to add DDR3 initialization code for Exynos5420.
Signed-off-by: Akshay Saraswat <akshay.s@samsung.com>
Signed-off-by: Rajeshwari S Shinde <rajeshwari.s@samsung.com>
Acked-by: Simon Glass <sjg@chromium.org>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>
This patch performs the following:
1) Convert the assembly code for memory and clock initialization to C code.
2) Move the memory and clock init codes from board/samsung to arch/arm
3) Creat a common lowlevel_init file across Exynos4 and Exynos5. Converted
the common lowlevel_init from assembly to C-code
4) Made spl_boot.c and tzpc_init.c common for both exynos4 and exynos5.
5) Enable CONFIG_SKIP_LOWLEVEL_INIT as stack pointer initialisation is already
done in _main.
6) exynos-uboot-spl.lds made common across SMDKV310, Origen and SMDK5250.
TEST: Tested SD-MMC boot on SMDK5250 and Origen.
Tested USB and SPI boot on SMDK5250
Compile tested for SMDKV310.
Signed-off-by: Rajeshwari Shinde <rajeshwari.s@samsung.com>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>
The patch adds the memory initialization sequence of DDR3.
Signed-off-by: Hatim Ali <hatim.rv@samsung.com>
Signed-off-by: Rajeshwari Shinde <rajeshwari.s@samsung.com>
Signed-off-by: Minkyu Kang <mk7.kang@samsung.com>