Remove dependencies between DoC code and old legacy NAND driver.

Necessary defines and data structures were copied to DoC specific files
so that legacy NAND code could be entirely removed from u-boot tree
in the near future.

common/cmd_doc.c

@@ -22,11 +22,7 @@
 #if (CONFIG_COMMANDS & CFG_CMD_DOC)
 
 #include <linux/mtd/nftl.h>
-#include <linux/mtd/nand_legacy.h>
-#include <linux/mtd/nand_ids.h>
-
 #include <linux/mtd/doc2000.h>
-#include <linux/mtd/nftl.h>
 
 #ifdef CFG_DOC_SUPPORT_2000
 #define DoC_is_2000(doc) (doc->ChipID == DOC_ChipID_Doc2k)
@@ -69,6 +65,32 @@ static struct DiskOnChip doc_dev_desc[CFG_MAX_DOC_DEVICE];
 /* Current DOC Device	*/
 static int curr_device = -1;
 
+/* Supported NAND flash devices */
+static struct nand_flash_dev nand_flash_ids[] = {
+	{"Toshiba TC5816BDC",     NAND_MFR_TOSHIBA, 0x64, 21, 1, 2, 0x1000, 0},
+	{"Toshiba TC5832DC",      NAND_MFR_TOSHIBA, 0x6b, 22, 0, 2, 0x2000, 0},
+	{"Toshiba TH58V128DC",    NAND_MFR_TOSHIBA, 0x73, 24, 0, 2, 0x4000, 0},
+	{"Toshiba TC58256FT/DC",  NAND_MFR_TOSHIBA, 0x75, 25, 0, 2, 0x4000, 0},
+	{"Toshiba TH58512FT",     NAND_MFR_TOSHIBA, 0x76, 26, 0, 3, 0x4000, 0},
+	{"Toshiba TC58V32DC",     NAND_MFR_TOSHIBA, 0xe5, 22, 0, 2, 0x2000, 0},
+	{"Toshiba TC58V64AFT/DC", NAND_MFR_TOSHIBA, 0xe6, 23, 0, 2, 0x2000, 0},
+	{"Toshiba TC58V16BDC",    NAND_MFR_TOSHIBA, 0xea, 21, 1, 2, 0x1000, 0},
+	{"Toshiba TH58100FT",     NAND_MFR_TOSHIBA, 0x79, 27, 0, 3, 0x4000, 0},
+	{"Samsung KM29N16000",    NAND_MFR_SAMSUNG, 0x64, 21, 1, 2, 0x1000, 0},
+	{"Samsung unknown 4Mb",   NAND_MFR_SAMSUNG, 0x6b, 22, 0, 2, 0x2000, 0},
+	{"Samsung KM29U128T",     NAND_MFR_SAMSUNG, 0x73, 24, 0, 2, 0x4000, 0},
+	{"Samsung KM29U256T",     NAND_MFR_SAMSUNG, 0x75, 25, 0, 2, 0x4000, 0},
+	{"Samsung unknown 64Mb",  NAND_MFR_SAMSUNG, 0x76, 26, 0, 3, 0x4000, 0},
+	{"Samsung KM29W32000",    NAND_MFR_SAMSUNG, 0xe3, 22, 0, 2, 0x2000, 0},
+	{"Samsung unknown 4Mb",   NAND_MFR_SAMSUNG, 0xe5, 22, 0, 2, 0x2000, 0},
+	{"Samsung KM29U64000",    NAND_MFR_SAMSUNG, 0xe6, 23, 0, 2, 0x2000, 0},
+	{"Samsung KM29W16000",    NAND_MFR_SAMSUNG, 0xea, 21, 1, 2, 0x1000, 0},
+	{"Samsung K9F5616Q0C",    NAND_MFR_SAMSUNG, 0x45, 25, 0, 2, 0x4000, 1},
+	{"Samsung K9K1216Q0C",    NAND_MFR_SAMSUNG, 0x46, 26, 0, 3, 0x4000, 1},
+	{"Samsung K9F1G08U0M",    NAND_MFR_SAMSUNG, 0xf1, 27, 0, 2, 0, 0},
+	{NULL,}
+};
+
 /* ------------------------------------------------------------------------- */
 
 int do_doc (cmd_tbl_t *cmdtp, int flag, int argc, char *argv[])

include/linux/mtd/doc2000.h

@@ -91,6 +91,13 @@ struct DiskOnChip;
 #define ADDR_PAGE 2
 #define ADDR_COLUMN_PAGE 3
 
+struct Nand {
+	char floor, chip;
+	unsigned long curadr;
+	unsigned char curmode;
+	/* Also some erase/write/pipeline info when we get that far */
+};
+
 struct DiskOnChip {
 	unsigned long physadr;
 	unsigned long virtadr;
@@ -148,4 +155,62 @@ void doc_probe(unsigned long physadr);
 
 void doc_print(struct DiskOnChip*);
 
+/*
+ * Standard NAND flash commands
+ */
+#define NAND_CMD_READ0		0
+#define NAND_CMD_READ1		1
+#define NAND_CMD_PAGEPROG	0x10
+#define NAND_CMD_READOOB	0x50
+#define NAND_CMD_ERASE1		0x60
+#define NAND_CMD_STATUS		0x70
+#define NAND_CMD_SEQIN		0x80
+#define NAND_CMD_READID		0x90
+#define NAND_CMD_ERASE2		0xd0
+#define NAND_CMD_RESET		0xff
+
+/*
+ * NAND Flash Manufacturer ID Codes
+ */
+#define NAND_MFR_TOSHIBA	0x98
+#define NAND_MFR_SAMSUNG	0xec
+
+/*
+ * NAND Flash Device ID Structure
+ *
+ * Structure overview:
+ *
+ *  name - Complete name of device
+ *
+ *  manufacture_id - manufacturer ID code of device.
+ *
+ *  model_id - model ID code of device.
+ *
+ *  chipshift - total number of address bits for the device which
+ *              is used to calculate address offsets and the total
+ *              number of bytes the device is capable of.
+ *
+ *  page256 - denotes if flash device has 256 byte pages or not.
+ *
+ *  pageadrlen - number of bytes minus one needed to hold the
+ *               complete address into the flash array. Keep in
+ *               mind that when a read or write is done to a
+ *               specific address, the address is input serially
+ *               8 bits at a time. This structure member is used
+ *               by the read/write routines as a loop index for
+ *               shifting the address out 8 bits at a time.
+ *
+ *  erasesize - size of an erase block in the flash device.
+ */
+struct nand_flash_dev {
+	char * name;
+	int manufacture_id;
+	int model_id;
+	int chipshift;
+	char page256;
+	char pageadrlen;
+	unsigned long erasesize;
+	int bus16;
+};
+
 #endif /* __MTD_DOC2000_H__ */